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25 August 1999 Halftone biasing OPC technology: an approach for achieving fine bias control on raster-scan systems
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Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999)
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
As the semiconductor roadmap continues to require imaging of smaller features on wafers, we continue to explore new approaches in OPC strategies to enhance existing technology. Advanced reticle design, intended for printing sub-wavelength features, requires the support of very fine-increment biases on semi-densely-pitched lines, where the CD correction requires only a fraction of the spot size of an e-beam system. Halftone biasing, a new OPC strategy, has been proposed to support these biases on a raster-scan e-beam system without the need for a reduced address unit and the consequent write time penalty. The manufacturability and inspectability of halftone-biased lines are explored, using an OPC characterization reticle. Pattern fidelity is examined using both optical and SEM tools. Printed DUV resist line edge profiles are compared for both halftone and non-halftone feature edges. Halftone biasing was applied to an SRAM-type simulation reticle, to examine its impact on data volume, write time reduction, and printing performance.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kent H. Nakagawa, J. Fung Chen, Robert John Socha, Thomas L. Laidig, Kurt E. Wampler, Douglas J. Van Den Broeke, Mircea V. Dusa, and Roger F. Caldwell "Halftone biasing OPC technology: an approach for achieving fine bias control on raster-scan systems", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999);


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