25 August 1999 Impact of mask CD error on wafer CD error at low-k1 photolithography
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Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360250
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
Abstract
With the reduction of feature size, until probably 0.13 micrometer generations, it is going to be patterned using a DUV illumination source at 248 nm. In these conditions, device development and manufacturing are occurring at ever decreasing k1 factor [k1 equals CD(NA/(lambda) )]. In this low-k1 region, degradation of image contrast brings about nonlinear amplification of mask CD error during image transferring on wafer. This phenomenon (ER; Error Ratio) is severely occurred when critical dimension is smaller than 0.5((lambda) /NA). In this paper, we investigated this phenomena with various condition such as critical dimension, density of L/S, mask type, and phase shift mask. Error ratio at defocused condition is also investigated. From this viewpoint, we discussed effect of mask CD error on wafer CD error and presented newly revised CD control criteria in each device generation. In addition, several strategy which should be considered for reducing error ratio and a photomask process technology for making next generation photomask satisfying high resolution and good CD control requirements has been described in view of low k1 lithography era.
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Byung Guk Kim, Byung Guk Kim, Seong-Woon Choi, Seong-Woon Choi, Ji-Hyun Choi, Ji-Hyun Choi, Chan-Uk Chun, Chan-Uk Chun, Hee-Sun Yoon, Hee-Sun Yoon, Jung-Min Sohn, Jung-Min Sohn, } "Impact of mask CD error on wafer CD error at low-k1 photolithography", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360250; https://doi.org/10.1117/12.360250
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