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25 August 1999 Interactive OPC simulator for memory devices
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Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360195
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
Abstract
The practical OPC simulation system suitable for memory devices is developed with a simple threshold model considering acid diffusion in chemically amplified resists. And the resist parameter extraction method is also presented. The simulation performance is within 0.01 micrometer CD error, and within a few second computation time for 4 micrometer2 area memory cell on a EWS.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hirotomo Inui, Haruo Iwasaki, Toshiyuki Ohta, and Hiroyoshi Tanabe "Interactive OPC simulator for memory devices", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360195
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