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25 August 1999 Mask manufacturability issues for subwavelength lithography
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Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360256
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
Abstract
As feature sizes approaches the resolution limit of optics (K1 factors less than 0.5) image quality rapidly degrades. The benefits of stepper reduction are reduced and unavoidable mask errors are amplified on silicon. This phenomenon is known as Mask Error Enhancement Factor (MEEF). MEEF puts severe constraints on the mask manufacturing process. Optical Proximity Correction (OPC) for sub-150 nm designs becomes a problem. Use of strong (alternating) phase shifting masks (PSM), however, greatly reduces Mask Error Factor (MEF) and inverts MEEF into Mask Error Attenuation Factor (MEAF). Application of strong PSM enables OPC for the next IC generation.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Linard Karklin and Kenneth E. Rachlin "Mask manufacturability issues for subwavelength lithography", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360256
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