Paper
25 August 1999 New approach for realizing k1=0.3 optical lithography
Masanobu Hasegawa, Akiyoshi Suzuki, Kenji Saito, Minoru Yoshii
Author Affiliations +
Abstract
A new exposure technology called IDEAL (Innovative Double Exposure by Advanced Lithography) which realizes k1 equals 0.3 optical lithography is introduced. In IDEAL exposure method, rough pattern mask and fine pattern mask are used. The rough pattern mask contributes to expand the degree of freedom in two-dimensional patterning and the fine pattern mask contributes to higher resolution and focus DOF enhancement. As an actual example, 120 nm gate array is formed using KrF 0.63 NA stepper. It has been confirmed that the double exposure method is effective in the pattern formation of irregularly arranged contact hole arrays of 150 nm. Furthermore, it is also shown that double exposure method is effective in the reduction of mask error enhancement factors (MEF).
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masanobu Hasegawa, Akiyoshi Suzuki, Kenji Saito, and Minoru Yoshii "New approach for realizing k1=0.3 optical lithography", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360235
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Cited by 5 scholarly publications.
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KEYWORDS
Photomasks

Optical lithography

Logic devices

Lithography

Photography

Scanning electron microscopy

Resolution enhancement technologies

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