25 August 1999 Plasma etching of Cr: a multiparameter uniformity study utilizing patterns of various Cr loads
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Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360203
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
Abstract
The plasma etching of Binary Cr films has become a true rate- limiting step in the recent production of high quality, 0.18 mm design rule Masks. The use of wet etch technology for Gate- level Poly definition Reticles is exceedingly difficult for 0.18 mm technologies and beyond; especially if the use of Optical Proximity Corrections (OPC's) becomes mainstream. The use of Plasma etch will significantly improve the Isolated/Dense Linearity as well as overall CD Uniformity. However, a recent issue is that the Cr dry etch parameters are sensitive to the overall Cr loading for the Mask pattern. It is well known that low Cr masks (e.g., Contact layer patterns) will require a different set of process conditions then more highly loaded parts (e.g., SRAM patterns). This study focuses on the resultant uniformity of Cr etch, both for the blanket etch of Cr as well as the etch of high and low load parts for CD Evaluation.
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Chris Constantine, Chris Constantine, Russell J. Westerman, Russell J. Westerman, Jason Plumhoff, Jason Plumhoff, } "Plasma etching of Cr: a multiparameter uniformity study utilizing patterns of various Cr loads", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360203; https://doi.org/10.1117/12.360203
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