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25 August 1999 Printability of programmed x-ray mask defects
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Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360226
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
Abstract
In order to specify the sensitivity of the next generation inspection system, we investigated the printability of x-ray mask defects by using the simulator (Toolset) developed by University of Wisconsin. The defect size replicated in the resist was simulated for various exposure conditions such as exposure gap, mask contrast, and beam blur. The critical dimension (CD) errors due to mask defects were also calculated for the mask defect size, opaque and clear defects, and the mask pattern configuration. Based on these results, the critical size for 100 nm feature line-and-space (L&S) patterns was discussed and the sensitivity of defect inspection system for 100 nm feature L&S patterns is estimated to be at most 40 nm as the critical defect sizes inducing 10 nm CD error.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Watanabe, H. Yabe, Yukiko Kikuchi, K. Marumoto, and Yasuji Matsui "Printability of programmed x-ray mask defects", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360226
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