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25 August 1999 Progress in SiC membrane for x-ray mask
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Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360243
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
Abstract
In 1992, we began development of SiC membranes for X-ray masks using a prototype LPCVD system. A production type LPCVD system had been newly designed to provide significant improvements in film uniformity and achieved high productivity. SiC films of 2 micrometer in thickness produced by the new system showed uniform thickness distribution of plus or minus 0.6% in an area of 50 mm in diameter, and uniform stress of plus or minus 1% in an area of 25 mm square. SiC films in the suitable stress range of 100 to 350 MPa in tensile, with excellent thickness repeatability of plus or minus 0.06 micrometer, have been produced by the optimized process. SiC membrane of 3 micrometer in thickness, which are more effective for obtaining precise masks, showed uniformity similar to the membrane of 2 micrometer in thickness.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsutomu Shoki, Akinori Kurikawa, Takamitsu Kawahara, and Tadashi Sakurai "Progress in SiC membrane for x-ray mask", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360243
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