25 August 1999 Reduction of fogging effect caused by scattered electrons in an electron beam system
Author Affiliations +
Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360242
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
Abstract
Background exposure of a resist caused by scattered electrons (the fogging effect) degrades critical dimension accuracy when the pattern density changes over the specimen. We measured the fogging effect in an electron beam optical column. In order to reduce the fogging effect, a scattered electron absorber plate having a converging holes structure was attached to the lower surface of the objective lens. When the most severe pattern for the fogging effect was applied, we achieved the size variation caused by the fogging effect less than 8 nm. The converging holes effectively trap the scattered electrons and greatly reduce the fogging effect.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naoharu Shimomura, Naoharu Shimomura, Munehiro Ogasawara, Munehiro Ogasawara, Jun Takamatsu, Jun Takamatsu, Shusuke Yoshitake, Shusuke Yoshitake, Kenji Ooki, Kenji Ooki, Noriaki Nakayamada, Noriaki Nakayamada, Fumiyuki Okabe, Fumiyuki Okabe, Toru Tojo, Toru Tojo, "Reduction of fogging effect caused by scattered electrons in an electron beam system", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360242; https://doi.org/10.1117/12.360242
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT


Back to Top