X-ray phase-shift mask for proximity x-ray lithography with synchrotron radiation

Mizunori Ezaki; Ken-ichi Murooka

doi:10.1117/12.360224

25 August 1999 X-ray phase-shift mask for proximity x-ray lithography with synchrotron radiation

Mizunori Ezaki, Ken-ichi Murooka

Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360224
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan

Abstract

In proximity X-ray lithography at the feasible gap size of approximately 10 micrometer, using attenuated phase-shift masks is the most effective method of achieving high resolution pattern transfer at the feature size of sub-100 nm. In this study, we have investigated the absorption and the phase-shift controllability of X-ray masks with various absorber materials by simulation and found that the phase- shift mask structure with Cu absorber is one of the best choices for proximity X-ray lithography using synchrotron radiation.

Citation Download Citation

Mizunori Ezaki and Ken-ichi Murooka "X-ray phase-shift mask for proximity x-ray lithography with synchrotron radiation", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360224

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