19 July 1999 InGaN-based LEDs and laser diodes
Author Affiliations +
Proceedings Volume 3749, 18th Congress of the International Commission for Optics; (1999) https://doi.org/10.1117/12.354827
Event: ICO XVIII 18th Congress of the International Commission for Optics, 1999, San Francisco, CA, United States
Abstract
A violet InGaN multi-quantum well/GaN/AlGaN separate- confinement-heterostructure laser diode (LD) was grown on epitaxially laterally overgrown GaN on sapphire. The threshold current density was 2 - 4 kA/cm2. The LDs with cleaved mirror facets showed an output power as high as 30 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode in the near-field patterns was observed at an output power up to 30 mW. The lifetime of the LDs at a constant output power of 5 mW was more than 1,900 hours under CW operation at an ambient temperature of 50 degree(s)C.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shuji Nakamura, "InGaN-based LEDs and laser diodes", Proc. SPIE 3749, 18th Congress of the International Commission for Optics, (19 July 1999); doi: 10.1117/12.354827; https://doi.org/10.1117/12.354827
PROCEEDINGS
2 PAGES


SHARE
RELATED CONTENT

New directions in GaN photonics
Proceedings of SPIE (February 29 2016)
High-power and wide wavelength range GaN-based laser diodes
Proceedings of SPIE (February 21 2006)
Characteristics of CW violet laser diodes grown by MBE
Proceedings of SPIE (February 22 2006)
GaN-based violet laser diodes
Proceedings of SPIE (June 06 2001)

Back to Top