Ultracompact single-longitudinal-mode solid state lasers with 500-mW output at 1064 nm and 200-mW output at 1340 nm

Tianfeng Jin; Reinhard F. Bruch; H. Stan Showers

doi:10.1117/12.366466

25 October 1999 Ultracompact single-longitudinal-mode solid state lasers with 500-mW output at 1064 nm and 200-mW output at 1340 nm

Tianfeng Jin, Reinhard F. Bruch, H. Stan Showers

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Proceedings Volume 3758, Application of Tunable Diode and Other Infrared Sources for Atmospheric Studies and Industrial Processing Monitoring II; (1999) https://doi.org/10.1117/12.366466
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

We report here on ultra-compact diode-pumped single frequency, TEM_oo mode Nd:YVO₄ lasers at 1064 nm and 1340 nm. The lasers incorporate coupled cavity design operating in single longitudinal mode with a line-width of less than 20 kHz and frequency drift of 50 MHz over 10 minutes. These lasers produce more than 500 mW output at 1064 nm and more than 200 mW output at 1340 nm wavelength and are pumped by a 1.2 W laser diode. In addition, the lasers also feature excellent output stability with a output power variation of less than 1% over 8 hours and less than 0.2% amplitude noise in the 10 Hz to 50 MHz frequency range. The dimensions of the laser head are 3 X 3 X 12 cm and the universal 100 to 240 VAC input power control unit has been dimensions of 5 X 14 X cm. The total power consumption of the laser system is only 12 W. Therefore these ultra-compact, single frequency lasers will have a great potential for analytical instrumentation, Raman spectroscopy, biomedical diagnostics, optical communication as well as space exploration.

Citation Download Citation

Tianfeng Jin, Reinhard F. Bruch, and H. Stan Showers "Ultracompact single-longitudinal-mode solid state lasers with 500-mW output at 1064 nm and 200-mW output at 1340 nm", Proc. SPIE 3758, Application of Tunable Diode and Other Infrared Sources for Atmospheric Studies and Industrial Processing Monitoring II, (25 October 1999); https://doi.org/10.1117/12.366466

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KEYWORDS

Semiconductor lasers

Neodymium lasers

Crystals

Laser stabilization

Laser systems engineering

Diodes

Solid state lasers

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