25 November 1999 Development of 256x256 GaN ultraviolet imaging arrays
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Abstract
We have successfully developed a prototype 256 X 256 photoconductive GaN ultraviolet (UV) imaging array. The array, with its pixels (30 X 30 micrometer2) indium bump bonded to a Lockheed Martin Fairchild Systems LT9601 readout integrated circuit, is highly sensitive to ultraviolet light below 365 nm with a sharp reduction in response to visible and infrared light. The array was installed into a custom designed UV camera utilizing a Nikon UV lens with all the off-chip electronics interfaced to an automatic computer controlled system. To the best of our knowledge, this is the first reported UV array camera based on the nitride materials.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ted Z. C. Huang, David Brent Mott, and Anh T. La "Development of 256x256 GaN ultraviolet imaging arrays", Proc. SPIE 3764, Ultraviolet and X-Ray Detection, Spectroscopy, and Polarimetry III, (25 November 1999); doi: 10.1117/12.371089; https://doi.org/10.1117/12.371089
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