22 October 1999 Improving the high-energy sensitivity of x-ray CCDs
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Abstract
We present a method of improving the quantum efficiency of MOS CCDs. We show that a change of operation can increase the depletion depth of standard bulk devices. The conclusions point to a point to a potential increase in the depletion depth of 300 percent by the use of optimized materials and operating conditions.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adam Keay, Adam Keay, Andrew D. Holland, Andrew D. Holland, David J. Burt, David J. Burt, "Improving the high-energy sensitivity of x-ray CCDs", Proc. SPIE 3765, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy X, (22 October 1999); doi: 10.1117/12.366540; https://doi.org/10.1117/12.366540
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