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22 October 1999 In-situ measurement of the channel stop structure in AXAF CCDs
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Abstract
We present results from recent measurements of the channel stop structures in AXAF CCDs. We discuss refinements of a technique that uses a thin metal film with small, periodically spaced holes to restrict incident photons to well-defined regions of the pixel, providing a way to probe sub-pixel structure. By making monochromatic measurements at different energies, we can reliably determine the width and thickness of the channel stop pPLU-type silicon implant and its insulating oxide layer.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael J. Pivovaroff, Steven E. Kissel, Gregory Y. Prigozhin, Mark W. Bautz, and George R. Ricker Jr. "In-situ measurement of the channel stop structure in AXAF CCDs", Proc. SPIE 3765, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy X, (22 October 1999); https://doi.org/10.1117/12.366509
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