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22 October 1999 Novel backside structure with improved energy resolution
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Abstract
We have experimentally shown that heavily doped p+ layer at the silicon-silicon dioxide interface leads to charge losses in the signal electron clouds due to surface recombination and results in degraded energy resolution of the response of backside illuminated AXAF CCDs to low energy x-rays. The size of secondary ionization cloud generated by an incident x-ray photon can be much larger than that predicted from higher energy electron range-energy relations as the frontside illuminated CCD, while having high quantum efficiency at low energies. It shrinks the area of the heavily doped silicon to less than 2 percent of the pixel are, thus dramatically reducing recombination losses. If this design is combined with fully depleted silicon structures, it promises a highly efficiency x-ray sensor with a good energy resolution throughput the 0.1-15 keV band.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory Y. Prigozhin, Michael J. Pivovaroff, Steven E. Kissel, Mark W. Bautz, and George R. Ricker Jr. "Novel backside structure with improved energy resolution", Proc. SPIE 3765, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy X, (22 October 1999); https://doi.org/10.1117/12.366512
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