22 October 1999 PN-CCD detector for XMM and ABRIXAS
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Abstract
A 6 cm X 6 cm large monolithic charge coupled device has been developed and fabricated as focal plane x-ray detector for the European XMM satellite mission and the German ABRIXAS mission. This spectroscopic silicon detector is denominated pn-CCD because of its use of reverse biased pn- junctions as charge transfer registers, as ultra-thin homogeneous photon entrance window and for the on-chip electronics. Due tot he pn-CCD concept, the whole wafer thickness of 300 micrometers is sensitive to ionizing radiation. The read-out is performed in parallel and needs only 73 ms for the 36 cm2 large detector area. A uniform low noise performance is realized by on-chip integrated JFET electronics. The two best pn-CCDs have been integrated in the flight cameras for XMM and abrixas and extensively tested for the long term operation in space. The presentation comprises the basic concept of the detector, a short description of the flight device and its fabrication, test and operating as well as the key performance parameters. The concluding outlook describes methods of further development of the pn-CCD.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Norbert Meidinger, Heinrich W. Braeuninger, Ulrich G. Briel, Robert Hartmann, Gisela D. Hartner, Peter Holl, Josef Kemmer, Eckhard Kendziorra, Norbert Krause, Gerhard Lutz, Elmar Pfeffermann, Martin Popp, Claus Reppin, Rainer H. Richter, Heike Soltau, Diana Stoetter, Lothar Strueder, Joachim E. Truemper, Christoph von Zanthier, "PN-CCD detector for XMM and ABRIXAS", Proc. SPIE 3765, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy X, (22 October 1999); doi: 10.1117/12.366501; https://doi.org/10.1117/12.366501
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KEYWORDS
Sensors

Charge-coupled devices

Silicon

X-rays

Semiconducting wafers

Electronics

Electrons

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