Paper
19 October 1999 Correlation between bulk material defects and spectroscopic response in cadmium zinc telluride detectors
Bradford H. Parker, Carl Michael Stahle, Scott D. Barthelmy, Ann M. Parsons, Jack Tueller, J. T. VanSant, B. F. Munoz, S. J. Snodgrass, R. E. Mullinix
Author Affiliations +
Abstract
One of the critical challenges for large area cadmium zinc telluride (CdZnTe) detector arrays is obtaining material capable of uniform imaging and spectroscopic response. Two complementary nondestructive techniques for characterizing bulk CdZnTe have been developed to identify material with a uniform response. The first technique, IR transmission imaging, allows for rapid visualization of bulk defects. The second technique, x-ray spectral mapping, provides a map of the material spectroscopic response when it is configured as a planar detector. The two techniques have been used to develop a correlation between bulk defect type and detector performance. The correlation allows for the use of IR imaging to rapidly develop wafer mining maps. The mining of material free of detrimental defects has the potential to dramatically increase the yield and quality of large area CdZnTe detector arrays.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bradford H. Parker, Carl Michael Stahle, Scott D. Barthelmy, Ann M. Parsons, Jack Tueller, J. T. VanSant, B. F. Munoz, S. J. Snodgrass, and R. E. Mullinix "Correlation between bulk material defects and spectroscopic response in cadmium zinc telluride detectors", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366576
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Cited by 12 scholarly publications.
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KEYWORDS
Sensors

X-rays

Semiconducting wafers

Infrared imaging

Spectroscopy

Tellurium

Image transmission

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