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19 October 1999 Radiation hardness of silicon detectors manufactured on oxygen- and carbon-enriched material
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Abstract
Recent results on the radiation hardness of silicon detectors fabricated on gloat zone bulk silicon enriched by carbon and oxygen are reported. The results indicate that the radiation hardness of silicon detectors can be determined by the concentration of oxygen and carbon atoms in the bulk material. The study has been carried out in the framework of the RD48 collaboration, which is studying the radiation hardening of silicon detectors.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arie Ruzin, Maurice Glaser, and Francois Lemeilleur "Radiation hardness of silicon detectors manufactured on oxygen- and carbon-enriched material", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366608
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