Surface barrier detectors made from ultrahigh-purity P-type silicon for <beta>- and x-ray spectroscopy

Toufik Hadjersi; Hocine Cheraga; Wafia Chergui

doi:10.1117/12.366618

19 October 1999 Surface barrier detectors made from ultrahigh-purity P-type silicon for β- and x-ray spectroscopy

Toufik Hadjersi, Hocine Cheraga, Wafia Chergui

Proceedings Volume 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics; (1999) https://doi.org/10.1117/12.366618
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

The technological process of fabrication of surface barrier silicon detectors by using ultra-high purity P-type silicon crystals with extra-high resistivity is described. An investigation on the reduction of the leakage current of this device type has been carried out. Indeed, several surface barrier silicon detectors have been realized and each of them has undergone a specific surface treatment. The best result has been obtained with K₂Cr₂O₇- solution treatment.

Citation Download Citation

Toufik Hadjersi, Hocine Cheraga, and Wafia Chergui "Surface barrier detectors made from ultrahigh-purity P-type silicon for β- and x-ray spectroscopy", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366618

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