19 October 1999 Surface barrier detectors made from ultrahigh-purity P-type silicon for β- and x-ray spectroscopy
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Abstract
The technological process of fabrication of surface barrier silicon detectors by using ultra-high purity P-type silicon crystals with extra-high resistivity is described. An investigation on the reduction of the leakage current of this device type has been carried out. Indeed, several surface barrier silicon detectors have been realized and each of them has undergone a specific surface treatment. The best result has been obtained with K2Cr2O7- solution treatment.
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Toufik Hadjersi, Toufik Hadjersi, Hocine Cheraga, Hocine Cheraga, Wafia Chergui, Wafia Chergui, } "Surface barrier detectors made from ultrahigh-purity P-type silicon for β- and x-ray spectroscopy", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); doi: 10.1117/12.366618; https://doi.org/10.1117/12.366618
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