25 October 1999Far-infrared reflection-absorption investigation of SnCl4 on silica and Na-modified silica surfaces using the buried metal layer approach
Michael J. Pilling, - Nurhayati, Peter Gardner, Amir Awalludin, Martyn E. Pemble, Mark Surman
Michael J. Pilling,1 - Nurhayati,2 Peter Gardner,2 Amir Awalludin,3 Martyn E. Pemble,3 Mark Surman4
1Univ. of Manchester Institute of Science and Technology (United States) 2Univ. of Manchester Institute of Science and Technology (United Kingdom) 3Univ. of Salford (United Kingdom) 4Daresbury Lab./CLRC (United Kingdom)
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One of the key reactions in the CVD growth of SnO2 on glass is that between SnCl4 and H2O. Exploiting the buried metal layer approach, we have used far-infrared RAIRS at the Daresbury synchrotron, to study the initial steps in this process on model glass surfaces, consisting of thin (approximately 500 - 1000 angstroms) SiO2 films and Na covered SiO2 films grown on a tungsten substrate.
Michael J. Pilling,- Nurhayati,Peter Gardner,Amir Awalludin,Martyn E. Pemble, andMark Surman
"Far-infrared reflection-absorption investigation of SnCl4 on silica and Na-modified silica surfaces using the buried metal layer approach", Proc. SPIE 3775, Accelerator-based Sources of Infrared and Spectroscopic Applications, (25 October 1999); https://doi.org/10.1117/12.366645
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Michael J. Pilling, - Nurhayati, Peter Gardner, Amir Awalludin, Martyn E. Pemble, Mark Surman, "Far-infrared reflection-absorption investigation of SnCl4 on silica and Na-modified silica surfaces using the buried metal layer approach," Proc. SPIE 3775, Accelerator-based Sources of Infrared and Spectroscopic Applications, (25 October 1999); https://doi.org/10.1117/12.366645