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25 October 1999 Far-infrared reflection-absorption investigation of SnCl4 on silica and Na-modified silica surfaces using the buried metal layer approach
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Abstract
One of the key reactions in the CVD growth of SnO2 on glass is that between SnCl4 and H2O. Exploiting the buried metal layer approach, we have used far-infrared RAIRS at the Daresbury synchrotron, to study the initial steps in this process on model glass surfaces, consisting of thin (approximately 500 - 1000 angstroms) SiO2 films and Na covered SiO2 films grown on a tungsten substrate.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael J. Pilling, - Nurhayati, Peter Gardner, Amir Awalludin, Martyn E. Pemble, and Mark Surman "Far-infrared reflection-absorption investigation of SnCl4 on silica and Na-modified silica surfaces using the buried metal layer approach", Proc. SPIE 3775, Accelerator-based Sources of Infrared and Spectroscopic Applications, (25 October 1999); https://doi.org/10.1117/12.366645
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