21 October 1999 XUV laser reflectometry for optical constant determination
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We report the measurement of the optical constants of Si, GaP, InP, GaAs, GaAsP and Ir at a wavelength of 46.9 nm (26.5 eV). The optical constants were obtained from the measurement of the variation of the reflectivity as a function of angle utilizing, as an illumination source, a discharge pumped 46.9 nm table-top laser operated at a repetition rate of 1 Hz. These measurements constitute the first application of an ultrashort wavelength laser to materials research.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igor A. Artioukov, Brady R. Benware, Jorge J. G. Rocca, Matt Forsythe, Yurii A. Uspenskii, Alexander V. Vinogradov, "XUV laser reflectometry for optical constant determination", Proc. SPIE 3776, Soft X-Ray Lasers and Applications III, (21 October 1999); doi: 10.1117/12.366672; https://doi.org/10.1117/12.366672


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