15 November 1999 In-situ beam position monitoring system for electron-beam lithography
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Abstract
Novel beam monitoring methods for electron beam lithography systems were studied. In order to achieve high patterning accuracy, precise control of the beam position and of the beam exposure time is important. In conventional electron beam writing system, the written patterns are measured in order to evaluate the accuracy of the writing system. In this paper, two in-situ beam monitoring methods are proposed. One is the beam position monitoring method using a magnification lens and a microchannel plate (MCP) with a CCD camera. The beam image data projected on the MCP were observed using the prototype electron optical system. The beam position could be calculated by an image processing method. Also the simulation result of the conceptual in-situ beam monitoring system was shown. The other one is the beam blanking response measurement method using a fast MCP which has good pulse resolution and a fast response. The MCP output of pulse waveforms correlated with the beam blanking signal were observed with a good time resolution.
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Hitoshi Sunaoshi, Munehiro Ogasawara, Jun Takamatsu, Naoharu Shimomura, "In-situ beam position monitoring system for electron-beam lithography", Proc. SPIE 3777, Charged Particle Optics IV, (15 November 1999); doi: 10.1117/12.370133; https://doi.org/10.1117/12.370133
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