11 October 1999 Comprehensive characterization of copper indium disulfide thin film
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Abstract
Structural, optical and electrical characterization has been conducted on CuInS2 (CIS) thin film fabricated via spray CVD technique. Both RBS and Raman scattering analyses suggest that the film is slightly Cu rich by approximately 2%. XRD measurement indicates the film is polycrystalline CuInS2 with [220] orientation on a quartz substrate with a possible Cu1.7In0.05S secondary phase (< 3%) co-existing with CIS. The measured optical band gap of the film is about 1.44 eV. Hall effect measurements suggest that the film is p-type. Both measured mobility and resistivity are consistent with those of the bulk. The combination of AFM, STM and electrical measurements indicate that grain boundaries may be the charge carrier transport limiting factors. However, the presence of a secondary non- chalcopyrite phase is complicated the current study. It is still not clear the nature of the hole transport is due to so called `intrinsic doping' and `native defects' in the micron sized CIS crystals, or to the presence of a secondary phase or to the grain boundaries. It is shown that Raman and IR spectroscopy can be powerful tools to study the film stoichiometry, structural composition and molecular species present in the film.
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Richard Mu, Don Otto Henderson, Akira Ueda, Marvin H. Wu, Johnathan Bennett, M. A. M. Paliza, M. B. Huang, J. Keay, Leonard C. Feldman, K. C. Kwiatkowski, C. M. Lukehart, Jennifer Hollingsworth, W. E. Buhro, J. Harris, E. Gordon, A. Hepp, "Comprehensive characterization of copper indium disulfide thin film", Proc. SPIE 3789, Solar Optical Materials XVI, (11 October 1999); doi: 10.1117/12.367558; https://doi.org/10.1117/12.367558
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