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22 September 1999 Fabrication of ZnO nanostructure using near-field optical technology
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Abstract
ZnO nanodots have been successfully fabricated on a (001) Al2O3 substrate by photo-enhanced chemical vapor deposition (PE-MOCVD) combined with near-field optical technology. The optical near-field generated from an optical fiber probe tip allowed ZnO dots to selectively grow on the irradiated substrate surface, with a size smaller than the wavelength of the light source (λ=244 nm). The crystallinity and composition of ZnO were evaluated from planar films using x-ray diffraction analysis, optical transmittance and x-ray photoelectron spectroscopy. The planar films were grown using PE-MOCVD with a direct irradiation by an ultraviolet light source without probe tip. Above a deposition temperature of 150°C, stoichiometric ZnO films (R O:Zn=1), strongly the c-axis oriented and exhibiting a band gap of about 3.3 eV were obtained.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Geun Hyoung Lee, Yoh Yamamoto, Motonobu Kourogi, and Motoichi Ohtsu "Fabrication of ZnO nanostructure using near-field optical technology", Proc. SPIE 3791, Near-Field Optics: Physics, Devices, and Information Processing, (22 September 1999); doi: 10.1117/12.363850; https://doi.org/10.1117/12.363850
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