22 September 1999 Mode study of the light emission distribution in semiconductor microdisks by using near-field optical microscopy
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Abstract
Microcavity shows the growing importance of the intensity enhancement, inhibition and spectral narrowing of spontaneous emission. The advantages of microcavity lasers are the very low threshold and small size. We have fabricated three types of semiconductor microdisks: InGaP, GaN, and InGaN multi-quantum-well microdisk with sun-like E- beam resist microstructure. The diameters are ranging from 5 - 20 micros. The photoluminescence of those microdisks in far-field and near-field observation are compared. Far-field fluorescence imaging shows bright emission of fluorescence around the circumference of the microdisks that can be interpreted as whispering-gallery mode in the disks. However, due to the different disk structures, near-field fluorescence images give several other different views of the light distribution of the microdisks corresponding to different optical modes in the disks. A theoretical calculation of the light distribution of InGaP microdisk based on the theory of optical modes in microdisk lasers is presented in this paper. The near-field mapping of the InGaN microdisks with sun-like E-beam resist structure demonstrates the possibility of using gratings made on the circumference to achieve directional emission without lowering output power.
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Yu Zhang, Xing Zhu, Dai Lun, Hetian Zhou, Ruo Peng Wang, Yongchun Xin, Guozhong Wang, Shifa Xu, Yumin Shen, Bei-Wei Zhang, Guoyi Zhang, Zizhao Gan, Feijun Song, "Mode study of the light emission distribution in semiconductor microdisks by using near-field optical microscopy", Proc. SPIE 3791, Near-Field Optics: Physics, Devices, and Information Processing, (22 September 1999); doi: 10.1117/12.363855; https://doi.org/10.1117/12.363855
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