PROCEEDINGS VOLUME 3792
SPIE'S INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE, ENGINEERING, AND INSTRUMENTATION | 18-23 JULY 1999
Materials Research in Low Gravity II
SPIE'S INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE, ENGINEERING, AND INSTRUMENTATION
18-23 July 1999
Denver, CO, United States
Use of External Fields in Materials Processing I
Proc. SPIE 3792, Comparison of the effect of ug and magnetic fields on the crystal growth of floating zone silicon, 0000 (6 July 1999); doi: 10.1117/12.351265
Proc. SPIE 3792, Minimizing convection during solidification by exploiting variation in magnetic susceptibility, 0000 (6 July 1999); doi: 10.1117/12.351274
Proc. SPIE 3792, Influence of applied thermal gradients and a static magnetic field on Bridgman-grown GeSi alloys, 0000 (6 July 1999); doi: 10.1117/12.351282
Proc. SPIE 3792, Control and homogenization of oxygen distribution in Si crystals by the novel technique: electromagnetic Czochralski method (EMCZ), 0000 (6 July 1999); doi: 10.1117/12.351292
Proc. SPIE 3792, Use of traveling magnetic fields to control melt convection, 0000 (6 July 1999); doi: 10.1117/12.351298
Proc. SPIE 3792, Use of magnetic force to control convection, 0000 (6 July 1999); doi: 10.1117/12.351299
General Topics in Crystal Growth
Proc. SPIE 3792, CFD simulation of pulsed MOCVD to reduce gas-phase parasitic reaction, 0000 (6 July 1999); doi: 10.1117/12.351300
Proc. SPIE 3792, Electrical field effects in phthalocyanine film growth by vapor deposition, 0000 (6 July 1999); doi: 10.1117/12.351266
Proc. SPIE 3792, Experimental and numerical analysis of the segregation phenomena in manganese-doped gallium antimonide, 0000 (6 July 1999); doi: 10.1117/12.351267
Proc. SPIE 3792, Control of bubbles in fluids by using magnetic buoyancy forces, 0000 (6 July 1999); doi: 10.1117/12.351268
Use of External Fields in Materials Processing II
Proc. SPIE 3792, Control of convection during directional solidification in terrestrial and low gravity, 0000 (6 July 1999); doi: 10.1117/12.351269
Proc. SPIE 3792, Electromagnetic control of convection in semiconductor melts: thermoelectromagnetic convection (TEMC) and rotating magnetic fields, 0000 (6 July 1999); doi: 10.1117/12.351270
Proc. SPIE 3792, Semiconductor growth interface from solution in short-duration low-gravity environment, 0000 (6 July 1999); doi: 10.1117/12.351271
Proc. SPIE 3792, Detached growth of CdTe:Zn:V (STS-95): preliminary results, 0000 (6 July 1999); doi: 10.1117/12.351272
Analysis and Modeling
Proc. SPIE 3792, Steady and oscillatory thermocapillary convection generated by a bubble in 1-G and low-G applications, 0000 (6 July 1999); doi: 10.1117/12.351273
Proc. SPIE 3792, Numerical analysis of InGaAs crystal growth of a uniform composition under microgravity conditions, 0000 (6 July 1999); doi: 10.1117/12.351275
Proc. SPIE 3792, Effects of gravity on the double-diffusive convection during directional solidification of a nondilute alloy with application to HgCdTe, 0000 (6 July 1999); doi: 10.1117/12.351276
Proc. SPIE 3792, Control of conducting two-phase vapor-liquid medium hydrodynamics with the help of crossed electric and magnetic fields in microgravity conditions, 0000 (6 July 1999); doi: 10.1117/12.351277
Glasses, Alloys, and Melts I
Proc. SPIE 3792, Undercooling of Cu-based binary alloys in a flux and long drop tube, 0000 (6 July 1999); doi: 10.1117/12.351278
Proc. SPIE 3792, Melting and evaporating sodium tellurite melts in low-gravity drop shaft, 0000 (6 July 1999); doi: 10.1117/12.351279
Proc. SPIE 3792, Morphology and structure of ZnO films synthesized by off-axis sputtering deposition, 0000 (6 July 1999); doi: 10.1117/12.351280
Glasses, Alloys, and Melts II
Proc. SPIE 3792, Containerless solidification of BiFeO3 oxide under microgravity, 0000 (6 July 1999); doi: 10.1117/12.351281
Proc. SPIE 3792, Microstructure and superconducting properties of Bi2-xPbxSr2CaCu2Oy spherical particles transformed from an amorphous state prepared by a containerless melt solidification method, 0000 (6 July 1999); doi: 10.1117/12.351283
Proc. SPIE 3792, Electric field application to molten lithium borates, 0000 (6 July 1999); doi: 10.1117/12.351284
Property Measurements and Diagnostics
Proc. SPIE 3792, Development of an electrostatic levitator and containerless processing of metals, alloys, and semiconductors, 0000 (6 July 1999); doi: 10.1117/12.351285
Proc. SPIE 3792, Methods of viscosity measurements in sealed ampoules, 0000 (6 July 1999); doi: 10.1117/12.351286
Proc. SPIE 3792, Stereoscopic imaging velocimetry for space material processing experiments, 0000 (6 July 1999); doi: 10.1117/12.351287
Proc. SPIE 3792, Diagnostic study of plasma CVD under microgravity, 0000 (6 July 1999); doi: 10.1117/12.351288
Proc. SPIE 3792, Thermophysical properties of zirconium measured using electrostatic levitation, 0000 (6 July 1999); doi: 10.1117/12.351289
In-situ Monitoring and Diagnostics I
Proc. SPIE 3792, In-situ x-ray microscopy of phase and composition distributions in metal alloys during solidification, 0000 (6 July 1999); doi: 10.1117/12.351290
Proc. SPIE 3792, Measurement of convective temperature fluctuations in free silicon melt zones, 0000 (6 July 1999); doi: 10.1117/12.351291
Proc. SPIE 3792, Observation of surface oscillation in a molten silicon column using moire interferometry, 0000 (6 July 1999); doi: 10.1117/12.351293
In-situ Monitoring and Diagnostics II
Proc. SPIE 3792, Pattern formation of thermocapillary flows in liquid bridges, 0000 (6 July 1999); doi: 10.1117/12.351294
Proc. SPIE 3792, Three-dimensional numerical simulation of oscillatory Marangoni flow in half-zone of low-Pr fluids, 0000 (6 July 1999); doi: 10.1117/12.351295
Proc. SPIE 3792, Numerical simulation of oscillatory thermocapillary convection in liquid bridges, 0000 (6 July 1999); doi: 10.1117/12.351296
General Topics in Crystal Growth
Proc. SPIE 3792, Physical vapor transport of ZnSe--modeling studies: current status and future course, 0000 (6 July 1999); doi: 10.1117/12.351297
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