PROCEEDINGS VOLUME 3794
SPIE'S INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE, ENGINEERING, AND INSTRUMENTATION | 18-23 JULY 1999
Materials and Electronics for High-Speed and Infrared Detectors
SPIE'S INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE, ENGINEERING, AND INSTRUMENTATION
18-23 July 1999
Denver, CO, United States
Quantum Dots and Their Applications in Optoelectronic Devices
Proc. SPIE 3794, Infrared photodetectors fabricated from self-organized quantum dot nanostructures, 0000 (26 October 1999); doi: 10.1117/12.366731
Proc. SPIE 3794, Intermixing-induced tunability in infrared-emitting InGaAs/GaAs quantum dots, 0000 (26 October 1999); doi: 10.1117/12.366743
Materials and Devices for THz Generation and Detection
Proc. SPIE 3794, Demonstration of terahertz water-vapor spectroscopy with a photomixer transceiver, 0000 (26 October 1999); doi: 10.1117/12.366744
Proc. SPIE 3794, Modeling terahertz radiation from a photoconducting structure, 0000 (26 October 1999); doi: 10.1117/12.366745
Quantum Well Materials for Infrared Photodetectors
Proc. SPIE 3794, Materials and designs for high-temperature infrared photon detectors, 0000 (26 October 1999); doi: 10.1117/12.366727
Proc. SPIE 3794, InAs/Ga1-xInxSb infrared superlattice diodes: correlation between surface morphology and electrical performance, 0000 (26 October 1999); doi: 10.1117/12.366728
Proc. SPIE 3794, High-speed photocurrent in quantum well infrared photodetectors, 0000 (26 October 1999); doi: 10.1117/12.366729
Proc. SPIE 3794, Influence of interdiffusion on strained GaInSb/InAs material and its application on long-wavelength infrared photodectors, 0000 (26 October 1999); doi: 10.1117/12.366730
Section
Proc. SPIE 3794, Free-standing amorphous Y-Ba-Cu-O detectors for uncooled IR detection and the effects of doping, 0000 (26 October 1999); doi: 10.1117/12.366732
Proc. SPIE 3794, Characterization of optical properties of PtSi at 3.392 um from 300 K to 85 K and the relation of morphological effects, 0000 (26 October 1999); doi: 10.1117/12.366733
Poster Session
Proc. SPIE 3794, Self-cleaning effect and compensation mechanisms in Cl-doped high-resistivity cadmium telluride, 0000 (26 October 1999); doi: 10.1117/12.366734
Proc. SPIE 3794, Structure and physical properties of Zn1-xMgxSe single crystals, 0000 (26 October 1999); doi: 10.1117/12.366735
Section
Proc. SPIE 3794, Noise characteristics of bootstrapped photovoltaic and photoconductive detectors, 0000 (26 October 1999); doi: 10.1117/12.366736
Proc. SPIE 3794, MOSES: a modular sensor electronics system for space science and commercial applications, 0000 (26 October 1999); doi: 10.1117/12.366737
Proc. SPIE 3794, High-performance 480x12x4 linear CMOS IR multiplexer, 0000 (26 October 1999); doi: 10.1117/12.366738
Proc. SPIE 3794, Various layouts of analog CMOS optical position-sensitive detectors, 0000 (26 October 1999); doi: 10.1117/12.366739
Proc. SPIE 3794, Avalanche photodiode array sensor with high-speed CCD delay line readout, 0000 (26 October 1999); doi: 10.1117/12.366740
Proc. SPIE 3794, High-speed backside-illuminated time-delay-integration (TDI) CCDs, 0000 (26 October 1999); doi: 10.1117/12.366741
Proc. SPIE 3794, Ultrahigh-resolution 14,400-pixel trilinear color image sensor, 0000 (26 October 1999); doi: 10.1117/12.366742
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