26 October 1999 Characterization of optical properties of PtSi at 3.392 μm from 300 K to 85 K and the relation of morphological effects
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Abstract
PtSi/Si Schottky junctions, fabricated using a conventional technique of Pt deposition with a subsequent thermal anneal, are examined using X-ray diffraction, atomic force microscopy and a novel prism/gap/sample optical coupling system. With the aid of X-ray diffraction and atomic force microscopy it is shown that a post-anneal etch in aqua regia is essential for the removal of an unreacted, rough surface layer of Pt, to leave a much smoother PtSi film. The prism/gap/sample or Otto coupling ring is mounted in a small UHV chamber and has facilities for remote variation of the gap (by virtue of a piezo-actuator system) and variation of the temperature in the range of approximately 300 K - 85 K. The system is used to excite surface plasmon polaritons on the outer surface of the PtSi and thus produce sensitive optical characterization as a function of temperature. This is performed in order to yield an understanding of the temperature dependence of phonon and interface scattering of carriers in the PtSi.
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Shane O'Prey, Gerald F. Cairns, Paul Dawson, "Characterization of optical properties of PtSi at 3.392 μm from 300 K to 85 K and the relation of morphological effects", Proc. SPIE 3794, Materials and Electronics for High-Speed and Infrared Detectors, (26 October 1999); doi: 10.1117/12.366733; https://doi.org/10.1117/12.366733
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