Self-cleaning effect and compensation mechanisms in Cl-doped high-resistivity cadmium telluride

Vladimir N. Babentsov; Victoria Corregidor; Klaus-Werner Benz; Tobias Feltgen; Michael Fiederle; Ernesto Dieguez

doi:10.1117/12.366734

26 October 1999 Self-cleaning effect and compensation mechanisms in Cl-doped high-resistivity cadmium telluride

Vladimir N. Babentsov, Victoria Corregidor, Klaus-Werner Benz, Tobias Feltgen, Michael Fiederle, Ernesto Dieguez

Proceedings Volume 3794, Materials and Electronics for High-Speed and Infrared Detectors; (1999) https://doi.org/10.1117/12.366734
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

In this report a new up to dated view on the compensation mechanism in CdTe bulk crystals doped with Cl in concentration up to 10¹⁹ cm^-3 is given. This concentration of Cl doping gives a high resistivity material. The chlorine atoms can act as shallow donors being in Te sites or can form complex with cadmium vacancies, so called A-centers. Spatially resolved EDAX mapping of CdTe doped revealed nonstoichiometrical areas distributed over the surface. In these areas there are a high concentration of impurities, where the Cl is located in a very small inclusions, while Na is distributed all over the volume of the big inclusions. After a short-time annealing (4 hours) at low temperature (500 degree(s)C) in Cd atmosphere the areas with deviation from stoichiometry mostly disappeared as well as the inclusions which were present inside. This paper includes a review of the different aspects, which can influence a precise compensation mechanism in a non-doped and Cl doped CdTe.

Citation Download Citation

Vladimir N. Babentsov, Victoria Corregidor, Klaus-Werner Benz, Tobias Feltgen, Michael Fiederle, and Ernesto Dieguez "Self-cleaning effect and compensation mechanisms in Cl-doped high-resistivity cadmium telluride", Proc. SPIE 3794, Materials and Electronics for High-Speed and Infrared Detectors, (26 October 1999); https://doi.org/10.1117/12.366734

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