BARITT diodes with quantum wells

Vladimir M. Aroutiounian; Vahe V. Buniatyan; Stepan Petrosyan

doi:10.1117/12.370205

12 November 1999 BARITT diodes with quantum wells

Vladimir M. Aroutiounian, Vahe V. Buniatyan, Stepan Petrosyan

Proceedings Volume 3795, Terahertz and Gigahertz Photonics; (1999) https://doi.org/10.1117/12.370205
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

The impedance and noise characteristics of a semiconductor punch-through structure are theoretically examined for an operation under a condition when quantum wells (QWs) are present in the transit-time region of the structure. It is shown that the magnitude of the negative dynamic resistance can be increased under the influence of the trapping and escape effects of injected carriers by quantum wells. It is expected that the structure proposed have significantly higher operation frequencies in comparison with usual barrier-injection transit-time diode. It is shown also that the noise measure decreased under an influence injected charge carriers captured by QWs with the increase of the ration of the emission time of electrons emitted out of QWs due to the thermal excitation to the capture time of free charge carriers. The frequency band where this phenomenon takes place is narrowed and displaced to a lower frequency range.

Citation Download Citation

Vladimir M. Aroutiounian, Vahe V. Buniatyan, and Stepan Petrosyan "BARITT diodes with quantum wells", Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); https://doi.org/10.1117/12.370205

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