12 November 1999 FDTD technique in gigahertz, terahertz, and optoelectronic circuits
Author Affiliations +
Abstract
In this paper, we report our recent work in the development of the finite difference time-domain (FDTD) technique for the modeling of high-frequency, quasi-optical electronic and optoelectronic circuits. Our work includes FDTD analysis of active device-grid, anisotropic crystal structure, back-to- back varactor tripler and MESFET oscillator arrays, VCSEL, and miniature MMIC designs. Most of these works will be discussed in this paper.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Jennifer Hwu, Xudong Wang, Jishi Ren, "FDTD technique in gigahertz, terahertz, and optoelectronic circuits", Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); doi: 10.1117/12.370142; https://doi.org/10.1117/12.370142
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT

FDTD simulations of quasi-optical MESFET oscillator arrays
Proceedings of SPIE (November 13 1998)
Coupled plasmonic quantum bits
Proceedings of SPIE (January 22 2010)
Study on the generation of high power terahertz wave from...
Proceedings of SPIE (November 04 2010)
Optoelectronic GaN-based field effect transistors
Proceedings of SPIE (April 24 1995)
Development Of Polymeric Nonlinear Optical Materials
Proceedings of SPIE (January 28 1987)

Back to Top