12 November 1999 FDTD technique in gigahertz, terahertz, and optoelectronic circuits
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Abstract
In this paper, we report our recent work in the development of the finite difference time-domain (FDTD) technique for the modeling of high-frequency, quasi-optical electronic and optoelectronic circuits. Our work includes FDTD analysis of active device-grid, anisotropic crystal structure, back-to- back varactor tripler and MESFET oscillator arrays, VCSEL, and miniature MMIC designs. Most of these works will be discussed in this paper.
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R. Jennifer Hwu, Xudong Wang, Jishi Ren, "FDTD technique in gigahertz, terahertz, and optoelectronic circuits", Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); doi: 10.1117/12.370142; https://doi.org/10.1117/12.370142
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KEYWORDS
Finite-difference time-domain method

Crystals

Optoelectronics

Oscillators

Field effect transistors

Electronic circuits

Nonlinear crystals

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