12 November 1999 Global simulation of 2.5-THz GaAs Schottky mixers and 140-GHz InP TEOs using a unique time-domain analysis
Author Affiliations +
Abstract
We describe a unique and powerful global time-domain simulation technique for terahertz diodes such as GaAs Schottky diode mixers, GaAs Schottky diode frequency multipliers, and InP Transferred Electron Oscillators (TEOs). 1D, finite difference, drift-diffusion nonlinear device simulation codes have been linked with a convolution- based circuit analysis. These simulators allow designers to observe both the transient and steady state time domain behavior of the nonlinear circuits. Since physical device simulators have been used, the spatial and temporal behavior of the electrons and electric field within the device under large signal drive can be observed. This gives great insight into the internal device physics at high frequencies. The mixer code allows for the direct and fully self-consistent calculation of the conversion loss and noise temperature; the TEO code allows for fully autonomous calculation of oscillator start-up and frequency selection. Simulation results for 2.5 THz GaAs Schottky mixers and 140 GHz InP TEOs are given.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haoyue Wang, Haoyue Wang, Stephen H. Jones, Stephen H. Jones, Gregory B. Tait, Gregory B. Tait, Chris M. Mann, Chris M. Mann, } "Global simulation of 2.5-THz GaAs Schottky mixers and 140-GHz InP TEOs using a unique time-domain analysis", Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); doi: 10.1117/12.370146; https://doi.org/10.1117/12.370146
PROCEEDINGS
12 PAGES


SHARE
RELATED CONTENT


Back to Top