Guided-wave metal-semiconductor switch for modulation of 10.6-um radiation

Jonathan F. Holzman; Fred E. Vermeulen; Abdulhakem Y. Elezzabi

doi:10.1117/12.370157

12 November 1999 Guided-wave metal-semiconductor switch for modulation of 10.6-μm radiation

Jonathan F. Holzman, Fred E. Vermeulen, Abdulhakem Y. Elezzabi

Proceedings Volume 3795, Terahertz and Gigahertz Photonics; (1999) https://doi.org/10.1117/12.370157
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

We present a novel optical-optical switching technique for modulation of infrared radiation. The modulation response is based upon the optical perturbation of semiconductor layers within an air-filled metal-clad semiconductor waveguide. Generation of the electron-hole plasma within these layers is via femtosecond pulses of above bandgap radiation (800 nm). The propagation characteristics of this five-layer structure are analyzed through the coupling of quasi-static electromagnetic analysis to the time-varying optical properties of the semiconductor layers. It is found that the device is able to modulate radiation at various frequencies, though we specifically investigate modulation of 10.6 micrometers radiation. At this wavelength, an electron-hole photoinjection density of approximately 1 X 10¹⁸ cm^-3 in the semiconductor layers provides an extinction ratio of 30 dB. The significance of this modulation depth and possible applications to all-optical Mach Zehnder metal-clad semiconductor modulators and self- limiting switches are discussed.

Citation Download Citation

Jonathan F. Holzman, Fred E. Vermeulen, and Abdulhakem Y. Elezzabi "Guided-wave metal-semiconductor switch for modulation of 10.6-μm radiation", Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); https://doi.org/10.1117/12.370157

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