Photoluminescence of AlGaAs/GaAs asymmetric double quantum wells under intense mid-IR radiation

Jie Ming Feng; Chihiro Hamaguchi; T. Ohachi

doi:10.1117/12.370206

12 November 1999 Photoluminescence of AlGaAs/GaAs asymmetric double quantum wells under intense mid-IR radiation

Jie Ming Feng, Chihiro Hamaguchi, T. Ohachi

Proceedings Volume 3795, Terahertz and Gigahertz Photonics; (1999) https://doi.org/10.1117/12.370206
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

To investigate radiation effects on Al_0.36Ga_0.64As/GaAs asymmetric double quantum wells, we made photoluminescence (PL) measurements using intense, mid- infrared (IR) radiation from a pulsed CO₂ laser and a free electron laser (FEL). Also, we investigated the generation of a non-thermal distribution of electrons by combining a continuous wave He-Ne and a pulsed CO₂ laser. The temperature of the electrons and their relaxation process under mid-IR irradiation was determined from the normalized PL intensities and the power loss. The energy relaxation process of the electrons at low temperature was dominated by the plasmon-phonon coupling mode. The intensity of the photoluminescence solely from FEL irradiation was strongly dependent on the FEL mean power, and the temperature dependence was much weaker than that of photoluminescence with the He-Ne laser. The peak energy of the photoluminescence was nearly independent of external applied voltage.

Citation Download Citation

Jie Ming Feng, Chihiro Hamaguchi, and T. Ohachi "Photoluminescence of AlGaAs/GaAs asymmetric double quantum wells under intense mid-IR radiation", Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); https://doi.org/10.1117/12.370206

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