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12 November 1999 Photoluminescence of AlGaAs/GaAs asymmetric double quantum wells under intense mid-IR radiation
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To investigate radiation effects on Al0.36Ga0.64As/GaAs asymmetric double quantum wells, we made photoluminescence (PL) measurements using intense, mid- infrared (IR) radiation from a pulsed CO2 laser and a free electron laser (FEL). Also, we investigated the generation of a non-thermal distribution of electrons by combining a continuous wave He-Ne and a pulsed CO2 laser. The temperature of the electrons and their relaxation process under mid-IR irradiation was determined from the normalized PL intensities and the power loss. The energy relaxation process of the electrons at low temperature was dominated by the plasmon-phonon coupling mode. The intensity of the photoluminescence solely from FEL irradiation was strongly dependent on the FEL mean power, and the temperature dependence was much weaker than that of photoluminescence with the He-Ne laser. The peak energy of the photoluminescence was nearly independent of external applied voltage.
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Jie Ming Feng, Chihiro Hamaguchi, and T. Ohachi "Photoluminescence of AlGaAs/GaAs asymmetric double quantum wells under intense mid-IR radiation", Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999);


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