12 November 1999 Recent trends in global simulation of millimeter-wave devices and circuits
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Abstract
In this paper, the importance of the global modeling concept is emphasized. Some of the recent developments in this regard are highlighted. To describe the different electromagnetic interactions in high frequency devices a full-wave transport model that incorporates full solution of Maxwell's equations inside the device is presented. Results from the model simulation that reveals the RF characteristics of both a conventional MESFET and an Air- Bridged gate MESFET are provided. In a second part of this paper, the problem of simulating large electromagnetic structure is addressed. A method based on the concept of time-domain impedance concept is proposed and its potential as solution to the problem in hand is highlighted.
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Samir M. Hammadi, Samir M. El-Ghazaly, "Recent trends in global simulation of millimeter-wave devices and circuits", Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); doi: 10.1117/12.370188; https://doi.org/10.1117/12.370188
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KEYWORDS
Field effect transistors

Device simulation

Instrument modeling

Antennas

Electromagnetism

Maxwell's equations

Microwave radiation

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