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1 October 1999Comparative study of the thermal properties of hybrid integrated VCSEL arrays
After successfully bonding VCSEL arrays to GaAs dummy chips and CMOS chips with three different bonding techniques, the thermal resistance and crosstalk of the bonded VCSEL arrays were measured. The thermal resistance of the VCSELs bonded to a GaAs substrate was found to be as low as 1100 K/W, indicating a high quality contact. Less than 100 K/W thermal crosstalk was also observed in the VCSEL arrays with a pitch of 250 micrometers . The thermal resistance of the VCSEL bonded to a CMOS chip with a standard bonding pad design has also been measured, which is 2490 K/W. The high thermal resistance is due to the dielectric layers underneath the bonding pads.
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Rui Pu, Carl W. Wilmsen, Kent D. Choquette, Kent M. Geib, "Comparative study of the thermal properties of hybrid integrated VCSEL arrays," Proc. SPIE 3805, Photonic Devices and Algorithms for Computing, (1 October 1999); https://doi.org/10.1117/12.363983