28 September 1999 Silicon ultraviolet photodiode processing via integrated MOS capacitors
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Abstract
A conventional pn diffused junction silicon photodiode originally developed for visible and near infrared light was optimized for ultraviolet wavelength spectrum. Optimization was performed with numerical simulation tools and experimental work. The results of modeling and experiment are compared and discussed. MOS capacitor was integrated on active region of photodiode in order to control the quality of fabricated surface passivation layer. p+n junction structure and antireflective coating have been identified as two most important design and processing steps.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Danilo Vrtacnik, Danilo Vrtacnik, Drago Resnik, Drago Resnik, Dejan Krizaj, Dejan Krizaj, Slavko Amon, Slavko Amon, } "Silicon ultraviolet photodiode processing via integrated MOS capacitors", Proc. SPIE 3818, Ultraviolet Atmospheric and Space Remote Sensing: Methods and Instrumentation II, (28 September 1999); doi: 10.1117/12.364155; https://doi.org/10.1117/12.364155
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