Character of photocurrent dependence on two-level recombination impurity concentration in an intrinsic photoconductive detector

Pavel S. Serebrennikov; Vyacheslav A. Kholodnov

doi:10.1117/12.350893

10 June 1999 Character of photocurrent dependence on two-level recombination impurity concentration in an intrinsic photoconductive detector

Pavel S. Serebrennikov, Vyacheslav A. Kholodnov

Author Affiliations +

Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350893
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation

Abstract

Under conditions of nonequilibrium carriers recombination through two-level impurity and of weak optical radiation photocurrent dependence on recombination impurity concentration N in the intrinsic photoresistor with extracting contacts is theoretically analyzed. It is shown that like in single-level impurity case there may be effect of gigantic photocurrent splash upon increasing in N. It is determined that photocurrent does not saturate with increasing electric field strength for a wide section of N preceding to the point of splash unlike the single-level impurity case. It is found out that the photocurrent dependence on two-level recombination impurity concentration may have two maxima. A physical interpretation of the results obtained is given.

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Pavel S. Serebrennikov and Vyacheslav A. Kholodnov "Character of photocurrent dependence on two-level recombination impurity concentration in an intrinsic photoconductive detector", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350893

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