Paper
10 June 1999 Comparative investigations of the bolometric properties of thin film structures based on vanadium dioxide and amorphous hydrated silicon
V. G. Malyarov, Igor A. Khrebtov, Yu. V. Kulikov, Igor I. Shaganov, V. Yu. Zerov, Nikolai A. Feoktistov
Author Affiliations +
Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350896
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation
Abstract
A choice of sensitive element material for uncooled microbolometric array dependents on the ultimate array parameters to a great extent. This paper presents the results of studies of sandwich and planar bolometric structures based on aSi:H and VO2 films accordingly. The aSi:H films were fabricated by plasmachemical vapor-phase deposition and VO2 films were prepared by reactive magnetron ion-plasma sputtering. Sandwich structures with area 100 X 100 micrometers have a resistance of 20 k(Omega) and temperature coefficient of resistance (TCR) of approximately equals 2%/K at 25 degree(s)C. Planar structures with operating section dimensions of 100 X 70 micrometers have TCR of 2.9%/K at the same resistance. The methods of contact noise reduction are found for both type structures. Sandwiches constructed to act as an optical cavity absorb 80% of radiation at 8 micrometers wavelength. It is shown that the planar structures absorption of 50 - 80% can be reached in the 8.5 - 10 micrometers band.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. G. Malyarov, Igor A. Khrebtov, Yu. V. Kulikov, Igor I. Shaganov, V. Yu. Zerov, and Nikolai A. Feoktistov "Comparative investigations of the bolometric properties of thin film structures based on vanadium dioxide and amorphous hydrated silicon", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350896
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Cited by 7 scholarly publications.
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KEYWORDS
Absorption

Resistance

Electrodes

Microbolometers

Doping

Silicon

Reflection

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