Crosstalk investigations in HgCdTe staring focal plane arrays

K. O. Boltar; Vitaly I. Stafeev; N. G. Mansvetov; N. I. Iakovleva

doi:10.1117/12.350911

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10 June 1999 Crosstalk investigations in HgCdTe staring focal plane arrays

K. O. Boltar, Vitaly I. Stafeev, N. G. Mansvetov, N. I. Iakovleva

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Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350911
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation

Abstract

Crosstalk in 32 X 32 and 128 X 128 HgCdTe staring focal plane arrays consisting of HgCdTe photodiode array bonded with silicon MOS-multiplexer by indium bumps have been investigated. The experimental results of crosstalk caused by the diffusion of photogenerated carriers, inverse surface layers and photoresistance effect in HgCdTe substrate are presented. The influence of drain-source leakage in multiplexer switching transistors on crosstalk is discussed.

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K. O. Boltar, Vitaly I. Stafeev, N. G. Mansvetov, and N. I. Iakovleva "Crosstalk investigations in HgCdTe staring focal plane arrays", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350911

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