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10 June 1999 Electronic and physical-chemical phenomena in commutational contact thermoelements of thermoelectrical coolers
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Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350907
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation
Abstract
The main physicochemical phenomena occurring at the interface of Bi2Te3-Sb2Te3 and Bi2Te3-Bi2Se3 crystals with Bi-, Sb-, Sn-, Pb-, Cd-, Ag-, and Ni-based metallic alloys (contact materials) are analyzed. It is shown that crystal surface damage, diffusion of the contact material into the near-contact region accompanied by changes in carrier concentration and work function, and the formation of intermediate-phase layers at the interface play a decisive role in the formation of electrical and adhesive properties of the contacts. It is demonstrated that low-resistance transition contacts with stable electrical parameters and sufficient adhesion strength can be fabricated.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. D. Alieva, H. M. Akhundova, and D. Sh. Abdinov "Electronic and physical-chemical phenomena in commutational contact thermoelements of thermoelectrical coolers", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350907
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