10 June 1999 Highly efficient extruded material for low-temperature electronic coolers based on Bi0.85Sb0.15
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Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350906
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation
Abstract
In present work are received high efficient and firm extruded material on the base of Bi0.85Sb0.15 solid solutions is obtained for low temperature coolers. Thermo and magnetothermoelectric figures of merit of developing material are sufficiently high and close to those for the monocrystalline samples, but firmness on bending in approximately 3 times exceeds firmness of monocrystalline samples. When doping samples Bi0.85Sb0.15 with 0,0005 at.% Te Z grows and reaches values 6,2 (DOT) 10-3 K-1. Magnitothermoelectrical figure of merit (Zmte) Bi0.85Sb0.15 solid solutions, doped with 0,0005 at.% Te at the temperature approximately 77 K and intensity of magnetic field approximately 11 X 104 A/m, has a value qual approximately 7,2 (DOT) 10-3 K-1. It is shown that under doping of the samples Bi0.85Sb0.15 by atoms with the concentration 0,05 at.% and more, changing a type of conductivity from electronic to hole occurs at temperatures below approximately 130 K, that leads to inversions of sign of factors coefficients (alpha) and RH. Z for the samples of p-type conductivity reaches values approximately 0,84 (DOT) 10-3 K-1 at approximately 77 K.
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M. M. Tagiyev, M. M. Tagiyev, F. S. Samedov, F. S. Samedov, Z. F. Agayev, Z. F. Agayev, } "Highly efficient extruded material for low-temperature electronic coolers based on Bi0.85Sb0.15", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); doi: 10.1117/12.350906; https://doi.org/10.1117/12.350906
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