10 June 1999 Linear HgCdTe scanning focal plane arrays with time delay and integration
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Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350881
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation
Abstract
RD&P Center ORION has developed a FPA technology based on planar HgCdTe photodiode arrays and custom designed silicon integrated readout circuits. Photovoltaic detectors array made on mercury cadmium telluride liquid phase epitaxy layer and silicon readout circuits are linked by indium bumps on sapphire interconnection substrate. Cooled silicon readout circuits have been made by n-MOS technology. This paper describes a generic architecture and development results of the linear 3 - 5 micrometers and 8 - 12 micrometers waveband TDI scanning IR FPA of 4 X 48, 2 X 96, 4 X 128, 2 X 256 formats. Performances of photovoltaic arrays based on MCT epilayers are introduced. Test methods and typical investigation results of hybrid FPA in the TDI mode are described. For 8 - 12 micrometers wavelength range detectivity is greater than (1-2) X 1011 cmW-1Hz1/2 for 4 X 48 and 4 X 128 FPA with four TDI elements and greater than (7-10) X 1010 cmW-1Hz1/2 for 2 X 96 or 2 X 256 FPA with two TDI elements.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. A. Bovina, I. D. Bourlakov, V. Y. Ivanov, S. V. Golovin, N. G. Mansvetov, V. N. Soliakov, Vitaly I. Stafeev, "Linear HgCdTe scanning focal plane arrays with time delay and integration", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); doi: 10.1117/12.350881; https://doi.org/10.1117/12.350881
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