Near-surface variband layers with small composition gradient as factors for the effective increase in photoresponsivity of an infrared HgCdTe photoconductive device (photoresistor)

Albina A. Drugova; Vyacheslav A. Kholodnov

doi:10.1117/12.350884

10 June 1999 Near-surface variband layers with small composition gradient as factors for the effective increase in photoresponsivity of an infrared HgCdTe photoconductive device (photoresistor)

Albina A. Drugova, Vyacheslav A. Kholodnov

Author Affiliations +

Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350884
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation

Abstract

It is shown that near-surface variband layers can afford the maximally possible photomodulation of conductivity of CdHgTe n-type samples for 8 - 12 and 3 - 5 micron light wavelengths. The photomodulation efficiency will be identical to that for absence of surface recombination. This is caused by the shaping of such photocarrier distribution which inhibits photocarrier diffusion to the surfaces even under small variband fields E_var. Therefore the number of defects in the variband layers can be decrease significantly at the cost of decrease in the gradient of mole composition of these layers.

Citation Download Citation

Albina A. Drugova and Vyacheslav A. Kholodnov "Near-surface variband layers with small composition gradient as factors for the effective increase in photoresponsivity of an infrared HgCdTe photoconductive device (photoresistor)", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350884

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