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10 June 1999 Peculiarities of growth and electrophysical properties of epitaxial films of Pb1-xSnxSe:In
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Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350900
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation
Abstract
Films of Pb1-xSnxSe (x equals 0,03 divided by 0,07) doped by In atoms have been grown on the substrate of BaF2(111,100) by a molecular beam condensation method. Peculiarities of growth and their electrophysical properties have been investigated. Electronographic, X-ray diffractometric and electron-microscopic methods, obtained the data on structure of films. Epitaxial films by the thickness about 1 divided by 1,5 micrometers were obtained at the substrate temperature equal (400 divided by 450) +/- 0,5C degree(s). The magnitudes of half-width of swinging curve of the X-ray diffraction changed within limits of W1/2 equals 100 divided by 200 angl.s. The concentration and mobility of the charge carriers were n equals (2 divided by 5) (DOT) 1016 cm-3 and (mu) equals (2 divided by 3) (DOT) 104 cm2/V(DOT)s, accordingly. Films had a mirror-smooth surface by planes of growth (111,100) on various substrates. The temperature dependencies of Hall coefficient RH of the Pb1-xSnxSe doped by indium (0,3 divided by 0,5 mass %) with different concentration of the charge carriers were investigated. It is shown that mobility determined from Hall and electroconductivity measurements in the impurity conductivity region changes on degree-low (mu) approximately T-v, where v equals 1,6 divided by 2,5.
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Eldar Yu. Salaev, I. R. Nuriyev, Ch. J. Jalilova, and N. V. Faradjev "Peculiarities of growth and electrophysical properties of epitaxial films of Pb1-xSnxSe:In", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350900
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