10 June 1999 Perspective method of receiving the epitaxial layers and p-n structures at superhigh vacuum
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Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350899
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation
Abstract
Original technique of the obtaining of epitaxial films of the A4B6 type semiconductors and p-n structures on their base in superhigh vacuum by the `hot wall' method have been developed. The conditions of the growth of epitaxial films of Pb1-xSnxTe (x equals 0,2) PbTe1-ySey (y equals 0,08) in superhigh vacuum are defined and peculiarities of their growth on various substrates have been established. In the order of increasing of charge carrier mobility and improving structure perfection of the films additional compensating source of halogen vapors was used. Crystallic structure of the obtained epitaxial films and p-n structures have been investigated by electronographic, electronomicroscophic and X-ray diffractometric methods. Isoperiodical heterostructures of p-Pb1-xSnxTe (x equals 0,2) - n-PbTe1-ySey (y equals 0,08) were obtained. On the base of heterostructures obtained photosensitive elements with parameters: Ro A77k equals 0,6 - 0,8 Ohm.cm2; 1max equals 10,5 micrometers were fabricated.
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I. R. Nuriyev, E. A. Akhmedov, Eldar Yunis oglu Salayev, M. I. Abdullayev, "Perspective method of receiving the epitaxial layers and p-n structures at superhigh vacuum", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); doi: 10.1117/12.350899; https://doi.org/10.1117/12.350899
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